Produktbeskrivning
The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28226 is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-ohm impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
Features:
* Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time * Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V * Wide Power System Train Input Voltage: 3 V Up to 27 V
* Wide Input PWM Signals: 2.0 V up to 13.2-V
Amplitude
* Capable to Drive MOSFETs with =40-A Current per Phase
* High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW - 2 MHz * Capable to Propagate <30-ns Input PWM Pulses
* Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
* 3-State PWM Input for Power Stage Shutdown * Space Saving Enable (Input) and Power Good(Output) Signals on Same Pin * Thermal Shutdown * UVLO Protection * Internal Bootstrap Diode
Applications:
* Multi-Phase DC-to-DC Converters with Analog or Digital Control
* Desktop and Server VRMs and EVRDs
* Portable and Notebook Regulators
* Synchronous Rectification for Isolated Power Supplies
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-ohm impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
Features:
* Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time * Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V * Wide Power System Train Input Voltage: 3 V Up to 27 V
* Wide Input PWM Signals: 2.0 V up to 13.2-V
Amplitude
* Capable to Drive MOSFETs with =40-A Current per Phase
* High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW - 2 MHz * Capable to Propagate <30-ns Input PWM Pulses
* Low-Side Driver Sink On-Resistance (0.4 ?) Prevents dV/dT Related Shoot-Through Current
* 3-State PWM Input for Power Stage Shutdown * Space Saving Enable (Input) and Power Good(Output) Signals on Same Pin * Thermal Shutdown * UVLO Protection * Internal Bootstrap Diode
Applications:
* Multi-Phase DC-to-DC Converters with Analog or Digital Control
* Desktop and Server VRMs and EVRDs
* Portable and Notebook Regulators
* Synchronous Rectification for Isolated Power Supplies
